HGTG10N120BND Description
The HGIG1ON120BNDis a PunchThroughPIGBT design. This is a new member of the LGBT family of MOS gated high voltage switches. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of MOSFET and the low conduction loss of bipolar transistors. GBT is a development TA49290. The diode used is a development TA49189.
IGBT is an ideal choice for many high voltage switches.
In applications that require medium frequency operation with low conduction loss, such as AC and DC motor controls, power and solenoid relays and contactor drivers.
HGTG10N120BNDFeatures
·35A1200V，Tc=25C
·1200V Switching SOA Capability
·Typical Fall Time.............140ns atT=150°·Short Circuit Rating
·Low Conduction Loss
HGTG10N120BND Applications
high voltage switches
