Name: HGTD1N120BNS9A
Brand: ON Semiconductor
SKU: HGTD1N120BNS9A
Price: 1.68000 USD
Availability: InStock

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HGTD1N120BNS9A

Manufacturer part number:HGTD1N120BNS9A

Manufacturer:ON Semiconductor

Description:NPTPIGBT TO252 5.3A 1200V

Case Package:SOT-23

Datasheet:HGTD1N120BNS9A Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	60W
Terminal Form	GULL WING
Current Rating	5.3A
Base Part Number	HGTD1N120
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	14ns
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	67 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	5.3A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Max Breakdown Voltage	1.2kV
Turn On Time	24 ns
Test Condition	960V, 1A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 1A
Turn Off Time-Nom (toff)	333 ns
IGBT Type	NPT
Gate Charge	14nC
Current - Collector Pulsed (Icm)	6A
Td (on/off) @ 25°C	15ns/67ns
Switching Energy	70μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max	20V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

HGTD1N120BNS9A Product Details

The ONSEMI HGTD1N120BNS9A is a single NPTPIGBT transistor in a TO252 package. It is designed for use in high-power applications, with a maximum current rating of 5.3A and a maximum voltage rating of 1200V. This transistor is ideal for use in applications such as motor control, power conversion, and power switching. It features a low on-state voltage drop, fast switching speed, and low gate drive power. The HGTD1N120BNS9A is a reliable and efficient solution for high-power applications.