IRG4BC20KDSTRRP Description
The IRG4BC20KDSTRRP is a 600V Discrete IGBT with a very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP? IGBT technology leads to significant improvement of static as well as the dynamic performance of the device due to the combination of trench top-cell and filed stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
IRG4BC20KDSTRRP Features
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency
Low conduction and switching losses
IRG4BC20KDSTRRP Applications
Power Management
Alternative Energy
Industrial
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
Wired networking
Enterprise systems
Enterprise projectors
