HGTP5N120BND Description
Non-Punch Through (NPT) IGBT designs include the HGTG5N120BND and HGTP5N120BND. They're the latest additions to the MOS gated high voltage switching IGBT family. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTP5N120BND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49308 development type. The TA49058 development type diode was used. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT.
HGTP5N120BND Features
? 21A, 1200V, TC = 25oC
? 1200V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC
? Short Circuit Rating
? Low Conduction Loss
? Thermal Impedance SPICE ModelTemperature Compensating SABER? Model
HGTP5N120BND Applications
? AC and DC motor controls
? Power supplies
? Drivers for solenoids,
? Drivers for relays
? Drivers for contactors
