FSB560 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.When VCE saturation is 350mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.75MHz is present in the transition frequency.This device can take an input voltage of 60V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor FSB560 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
