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UMT2222AT106

UMT2222AT106

UMT2222AT106

ROHM Semiconductor

UMT2222AT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

UMT2222AT106 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating600mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T2222A
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage1V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 35
Continuous Collector Current 600mA
Turn Off Time-Max (toff) 285ns
Collector-Base Capacitance-Max 7pF
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16764 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.050090$0.05009
500$0.036831$18.4155
1000$0.030692$30.692
2000$0.028158$56.316
5000$0.026316$131.58
10000$0.024480$244.8
15000$0.023675$355.125
50000$0.023279$1163.95

UMT2222AT106 Product Details

UMT2222AT106 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Continuous collector voltages should be kept at 600mA to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.Parts of this part have transition frequencies of 300MHz.Breakdown input voltage is 40V volts.A maximum collector current of 600mA volts is possible.

UMT2222AT106 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

UMT2222AT106 Applications


There are a lot of ROHM Semiconductor UMT2222AT106 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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