2SB1710TL Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.There is a transition frequency of 320MHz in the part.The breakdown input voltage is 30V volts.The maximum collector current is 1A volts.
2SB1710TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1710TL Applications
There are a lot of ROHM Semiconductor 2SB1710TL applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
