SMBT3906E6327HTSA1 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.There is a transition frequency of 250MHz in the part.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
SMBT3906E6327HTSA1 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz
SMBT3906E6327HTSA1 Applications
There are a lot of Infineon Technologies SMBT3906E6327HTSA1 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
