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DCP52-16-13

DCP52-16-13

DCP52-16-13

Diodes Incorporated

DCP52-16-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP52-16-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP52
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -1A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:22088 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.337284$1.337284
10$1.261588$12.61588
100$1.190178$119.0178
500$1.122809$561.4045
1000$1.059253$1059.253

DCP52-16-13 Product Details

DCP52-16-13 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.200MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as 1A volts.

DCP52-16-13 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP52-16-13 Applications


There are a lot of Diodes Incorporated DCP52-16-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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