DCP52-16-13 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.200MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as 1A volts.
DCP52-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCP52-16-13 Applications
There are a lot of Diodes Incorporated DCP52-16-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter