Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FQD12P10TM

FQD12P10TM

FQD12P10TM

ON Semiconductor

FQD12P10TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQD12P10TM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2002
Series QFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-9.4A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 2.5W Ta 50W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time160ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 37.6A
Avalanche Energy Rating (Eas) 370 mJ
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2162 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.439395$1.439395
10$1.357920$13.5792
100$1.281057$128.1057
500$1.208544$604.272
1000$1.140136$1140.136

FQD12P10TM Product Details

FQD12P10TM Description


FQD12P10TM belongs to the family of P-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD12P10TM is well suited for DC motor control, audio amplifiers, high-efficiency switching DC/DC converters, and so on.



FQD12P10TM Features


  • Planar stripe and DMOS technology

  • Advanced switching performance

  • Low on-state resistance

  • Low gate charge

  • Available in the D-PAK package



FQD12P10TM Applications


  • DC motor control

  • Audio amplifier

  • High-efficiency switching DC/DC converters


Get Subscriber

Enter Your Email Address, Get the Latest News