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AUIRF3205ZS

AUIRF3205ZS

AUIRF3205ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

SOT-23

AUIRF3205ZS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 170W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation170W
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time95ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 440A
Avalanche Energy Rating (Eas) 250 mJ
Height 4.83mm
Length 10.67mm
Width 11.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:3846 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.228272$1.228272
10$1.158747$11.58747
100$1.093158$109.3158
500$1.031281$515.6405
1000$0.972906$972.906

About AUIRF3205ZS

The AUIRF3205ZS from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 55V 75A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the AUIRF3205ZS, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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