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STL7NM60N

STL7NM60N

STL7NM60N

STMicroelectronics

STL7NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STL7NM60N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 14-PowerVQFN
Number of Pins 14
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series MDmesh™ II
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 900mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Base Part Number STL7
Pin Count14
JESD-30 Code S-PQCC-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation4W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 5.6A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2199 items

STL7NM60N Product Details

STL7NM60N Description


An N-channel Power MOSFET called STL7NM60N was created using MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the manufacturer's strip layout to produce one of the lowest on-resistance and gate charge values in the whole globe. Therefore, the most demanding high efficiency converters can use it.



STL7NM60N Features


  • 100% avalanche tested

  • Low gate input resistance

  • Low input capacitance and gate charge



STL7NM60N Applications


  • Industrial

  • Enterprise systems

  • Communications equipment


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