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GA05JT01-46

GA05JT01-46

GA05JT01-46

GeneSiC Semiconductor

SiC (Silicon Carbide Junction Transistor) Bulk 240m Ω @ 5A 100V TO-46-3

SOT-23

GA05JT01-46 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-46-3
Number of Pins 3
Operating Temperature-55°C~225°C TJ
PackagingBulk
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiC (Silicon Carbide Junction Transistor)
Power Dissipation-Max 20W Tc
Rds On (Max) @ Id, Vgs 240m Ω @ 5A
Current - Continuous Drain (Id) @ 25°C 9A Tc
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 9A
RoHS StatusRoHS Compliant
In-Stock:1500 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$56.23000$56.23
10$52.92600$529.26
25$49.61800$1240.45
100$47.30240$4730.24

GA05JT01-46 Product Details

GA05JT01-46 Overview


The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).For this transistor to work, a voltage 100V is required between drain and source (Vdss).

GA05JT01-46 Features


a continuous drain current (ID) of 9A
a 100V drain to source voltage (Vdss)


GA05JT01-46 Applications


There are a lot of GeneSiC Semiconductor
GA05JT01-46 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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