IRF6635 Description
The IRF6635 combines the latest [email protected] Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only a 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor-phase, infra-red, or convection soldering techniques. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems, improving the previous best thermal resistance by 80%。
IRF6635 Features
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra-Low Package Inductance
Optimized for High-Frequency Switching
ideal for CPU Core DC-DC Converters
Optimized for SyncFET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
IRF6635 Applications
eFuse
HotSwap
MultiPhase SyncFET
ORing
