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FGA50T65SHD

FGA50T65SHD

FGA50T65SHD

ON Semiconductor

FGA50T65SHD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA50T65SHD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Max Power Dissipation319W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 319W
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 100A
Reverse Recovery Time 34.6 ns
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage2.14V
Test Condition 400V, 50A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 22.4ns/73.6ns
Switching Energy 1.28mJ (on), 384μJ (off)
RoHS StatusROHS3 Compliant
In-Stock:1928 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.39000$5.39
10$4.85500$48.55
450$3.81093$1714.9185
900$3.43688$3093.192

FGA50T65SHD Product Details

Description


The FGA50T65SHD is an IGBT, 650 V, 50 A Field Stop Trench. The new line of field stop 3rd generation IGBTs from ON Semiconductor, using revolutionary field stop technology, provide the best performance for applications like solar inverters, UPS, welders, telecom, ESS, and PFC, where minimal conduction and switching losses are crucial.



Features


  • Fast Switching

  • Tighten Parameter Distribution

  • RoHS Compliant

  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A

  • 100% of the Parts Tested for ILM(1)

  • High Input Impedance

  • Maximum Junction Temperature: TJ =175°C

  • Positive Temperature Co-efficient for Easy Parallel Operating

  • High Current Capability



Applications


  • Solar Inverter

  • UPS

  • Welder

  • Telecom

  • ESS

  • PFC


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