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FGA25N120ANTDTU

FGA25N120ANTDTU

FGA25N120ANTDTU

ON Semiconductor

FGA25N120ANTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA25N120ANTDTU Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.40101g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation312W
Current Rating50A
Base Part Number FGA25N120A
Element ConfigurationSingle
Power Dissipation312mW
Input Type Standard
Turn On Delay Time50 ns
Rise Time60ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 190 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 350 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.65V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 50A
IGBT Type NPT and Trench
Gate Charge200nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Height 23.8mm
Length 15.8mm
Width 5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2493 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.36000$4.36
10$3.92900$39.29
450$3.08411$1387.8495
900$2.78140$2503.26

FGA25N120ANTDTU Product Details

Description


The FGA25N120ANTDTU is an NPT Trench IGBT with a voltage of 1200 V and a current of 25 A. The 1200V NPT IGBT features improved conduction and switching performance, great avalanche durability, and easy parallel operation thanks to ON Semiconductor's proprietary trench design and sophisticated NPT technology. This device is ideal for applications that require resonant or gentle switching, such as induction heating and microwave ovens.



Features


? Extremely Enhanced Avalanche Capability

? Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

? Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

? NPT Trench Technology, Positive Temperature Coefficient

? Low on-state voltage drop



Applications


? Induction Heating, Microwave Oven

? SMPS

? UPS

? AC and DC motor drives offering speed control

? Chopper and inverters

? Solar inverters


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