STGB35N35LZ-1 Description
This application specific IGBT utilizes the most advanced PowerMESHtechnology.The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
STGB35N35LZ-1 Features
.Designed for automotive applications and
AEC-Q101 qualified Low threshold voltage·Lowon-voltage drop
High voltage clamping feature Logic level gate charge
·ESD gate-emitter protection
Gate and gate-emitter integrated resistors
STGB35N35LZ-1 Application
·Automotive ignition
