Description
The STGW20NC60VD is a 30 A, 600 V, very fast IGBT. This IGBT makes excellent use of the cutting-edge Power MESHTM technology to balance switching performance and minimal on-state behavior. The insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware.
Features
Very soft ultra fast recovery antiparallel diode
High current capability
High frequency operation up to 50 kHz
Very low on-state voltage drop
Superior on-state current density
Applications
