Name: FDN86246
Brand: ON Semiconductor
SKU: FDN86246
Price: 1.41000 USD
Availability: InStock

new-10%

FDN86246

Manufacturer part number:FDN86246

Manufacturer:ON Semiconductor

Description:FDN86246 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDN86246 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 23 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	261m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 75V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Rise Time	1.1ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	3.4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Nominal Vgs	3.4 V
Feedback Cap-Max (Crss)	5 pF
Height	940μm
Length	1.4mm
Width	2.92mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FDN86246 Product Details

FDN86246 Description

FDN86246 is a 150v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDN86246 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN86246 is in the SSOT-3 package with 1.5W power dissipation.

FDN86246 Features

Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
High-Performance Trench Technology for Extremely Low rDS(on)
High Power and Current Handling Capability in a Widely Used Surface Mount Package
Fast Switching Speed
100% UIL Tested
RoHS Compliant