FDMB3800N Description
This 30V, 6.6m Ω, 3.37mx1.47mLGA Dual NexFET power MOSFET is designed to minimize resistance and gate charge in a small area. Its small size and common drain configuration make the device ideal for multi-battery applications and small handheld devices.These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance.These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDMB3800N Features
Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A
Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A
Fast switching speed
Low gate Charge
High performance trench technology for extremely low rDS(on)
High power and current handling capability.
RoHS Compliant
FDMB3800N Applications
This product is general usage and suitable for many different applications.
