FDC6305N Description
These N-channel low threshold 2.5V specify that the MOSFET is manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance.
FDC6305N Features
2.7 A, 20 V
RDS(on) = 0.08|? @ VGS = 4.5V
RDS(on) = 0.12|? @ VGS = 2.5V
Low gate charge (3.5nC typical)
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)
FDC6305N Applications
This product is general usage and suitable for many different applications.
