NDS9945 Description
SO-8 N channel enhanced power field effect transistors are produced using high cell density DMOS technology unique to Fairchild. This very high-density process is specially tailored to provide excellent switching performance and minimum state impedance. These devices are particularly suitable for low-voltage applications, such as fast-switching disk drive motor control batteries or high-voltage circuits. Low inline power consumption and anti-transient ability are required.
NDS9945 Features
3.5A60VR=0.100Ω@V=10V
RDSON=0.200Ω@Vas=4.5V.
High density cell design for extremely low RasON
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package
NDS9945 Applications
fast-switching disk drive motor control batteries
high-voltage circuits
