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BD13916S

BD13916S

BD13916S

ON Semiconductor

BD13916S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD13916S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD139
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 11mm
Length 8mm
Width 3.25mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2246 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.281574$0.281574
10$0.265636$2.65636
100$0.250600$25.06
500$0.236415$118.2075
1000$0.223033$223.033

BD13916S Product Details

BD13916S Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BD13916S Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

BD13916S Applications


There are a lot of ON Semiconductor BD13916S applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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