2STR1230 Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 850mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 850mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 1.5A volts.
2STR1230 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
2STR1230 Applications
There are a lot of STMicroelectronics 2STR1230 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
