MPS3646RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.When VCE saturation is 500mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 350MHz.A maximum collector current of 300mA volts can be achieved.
MPS3646RLRAG Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646RLRAG Applications
There are a lot of ON Semiconductor MPS3646RLRAG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
