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BD536J

BD536J

BD536J

ON Semiconductor

BD536J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD536J Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD536
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
In-Stock:1334 items

BD536J Product Details

BD536J Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 600mA, 6A.This product comes in a TO-220-3 device package from the supplier.The device has a 60V maximal voltage - Collector Emitter Breakdown.

BD536J Features


the DC current gain for this device is 30 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the supplier device package of TO-220-3

BD536J Applications


There are a lot of ON Semiconductor BD536J applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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