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TIP36A-S

TIP36A-S

TIP36A-S

Bourns Inc.

TIP36A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP36A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation3.5W
Reach Compliance Code unknown
Base Part Number TIP36
Number of Elements 1
Configuration Single
Power Dissipation125W
Power - Max 3.5W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A
Collector Emitter Breakdown Voltage60V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
RoHS StatusROHS3 Compliant
In-Stock:1149 items

TIP36A-S Product Details

TIP36A-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 15A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 5A, 25A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A maximum collector current of 25A volts can be achieved.

TIP36A-S Features


the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V

TIP36A-S Applications


There are a lot of Bourns Inc. TIP36A-S applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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