SMMBT4403LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBT4403LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
MMBT4403
Pin Count
3
Reference Standard
AEC-Q101
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
600mA
Max Frequency
200MHz
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-750mV
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
VCEsat-Max
0.75 V
Turn Off Time-Max (toff)
255ns
Collector-Base Capacitance-Max
8.5pF
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:44742 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.045370
$0.04537
500
$0.033360
$16.68
1000
$0.027800
$27.8
2000
$0.025505
$51.01
5000
$0.023836
$119.18
10000
$0.022173
$221.73
15000
$0.021444
$321.66
50000
$0.021086
$1054.3
SMMBT4403LT1G Product Details
SMMBT4403LT1G Description
SMMBT4403LT1G is a Switching Transistor PNP Silicon.
Just look at semiconductor's PNP SMMBT4403LT1G universal bipolar junction transistor, which can be easily operated in a high voltage range. The maximum emitter base voltage of the bipolar junction transistor is 5V and the maximum power consumption is 300mW. The assembly will be shipped in tape and reel packaging for effective installation and safe delivery. The maximum collector emitter voltage is 40V and the maximum emitter base voltage is 5V. The lowest operating temperature of the bipolar junction transistor is-55 °C and the highest operating temperature is 150 °C. Features
?S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable
?These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
SMMBT4403LT1G Features
? Input operating voltage range (VIN): 1.6 V to 5.5 V ? Maximum continuous current (IMAX): 1.5 A ? On-Resistance (RON): – 5-V VIN: 89 m? (typical) – 3.6-V VIN: 90 m? (typical) – 1.8-V VIN: 105 m? (typical) ? Output short protection (ISC): 3 A (typical) ? Low power consumption: – ON state (IQ): 8 μA (typical) – OFF state (ISD): 2 nA (typical) ? Smart ON pin pull down (RPD): – ON ≥ VIH (ION): 100 nA (maximum) – ON ≤ VIL (RPD): 530 kΩ (typical) ? Slow Turn ON timing to limit inrush current (tON): – 5.0 V Turn ON time (tON): 1.95 ms at 3.2 mV/μs – 3.6 V Turn ON time (tON): 1.75 ms at 2.7 mV/μs – 1.8 V Turn ON time (tON): 1.5 ms at 1.8 mV/μs ? Adjustable output discharge and fall time: – Internal QOD resistance = 24 Ω (typical)
SMMBT4403LT1G Applications
? Personal electronics ? Set top box ? HDTV ? Multi function printer
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