SNSS20101JT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).During maximum operation, collector current can be as low as 1A volts.
SNSS20101JT1G Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 220mV @ 100mA, 1A
SNSS20101JT1G Applications
There are a lot of ON Semiconductor SNSS20101JT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
