SBC807-40LT1G Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 100MHz.The maximum collector current is 500mA volts.
SBC807-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC807-40LT1G Applications
There are a lot of ON Semiconductor SBC807-40LT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
