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BC546BTF

BC546BTF

BC546BTF

ON Semiconductor

BC546BTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC546BTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLOW NOISE
Subcategory Other Transistors
Voltage - Rated DC 65V
Max Power Dissipation500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating100mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC546
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation500mW
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage65V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage250mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:22423 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.143160$0.14316
10$0.135057$1.35057
100$0.127412$12.7412
500$0.120200$60.1
1000$0.113396$113.396

BC546BTF Product Details

BC546BTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 300MHz.As a result, it can handle voltages as low as 65V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC546BTF Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC546BTF Applications


There are a lot of ON Semiconductor BC546BTF applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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