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MPSW92RLRAG

MPSW92RLRAG

MPSW92RLRAG

ON Semiconductor

MPSW92RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW92RLRAG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSW92
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4840 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.983943$0.983943
10$0.928248$9.28248
100$0.875706$87.5706
500$0.826138$413.069
1000$0.779375$779.375

MPSW92RLRAG Product Details

MPSW92RLRAG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.As a result, the part has a transition frequency of 50MHz.An input voltage of 300V volts is the breakdown voltage.A maximum collector current of 500mA volts can be achieved.

MPSW92RLRAG Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSW92RLRAG Applications


There are a lot of ON Semiconductor MPSW92RLRAG applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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