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BC856A RFG

BC856A RFG

BC856A RFG

Taiwan Semiconductor Corporation

BC856A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC856A RFG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:292949 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BC856A RFG Product Details

BC856A RFG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.This product comes in a SOT-23 device package from the supplier.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.

BC856A RFG Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23

BC856A RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC856A RFG applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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