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BCP51TF

BCP51TF

BCP51TF

Nexperia USA Inc.

BCP51TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP51TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Pin Count4
Power - Max 1.3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 140MHz
RoHS StatusROHS3 Compliant
In-Stock:89286 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.056585$0.056585
10$0.053383$0.53383
100$0.050361$5.0361
500$0.047510$23.755
1000$0.044821$44.821

BCP51TF Product Details

BCP51TF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BCP51TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP51TF Applications


There are a lot of Nexperia USA Inc. BCP51TF applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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