2SB1215S-H Overview
This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 150mA, 1.5A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1215S-H Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215S-H Applications
There are a lot of ON Semiconductor 2SB1215S-H applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
