PBSS8110Y,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 250mA 10V.When VCE saturation is 200mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 100V volts can be used.Maximum collector currents can be below 1A volts.
PBSS8110Y,115 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Y,115 Applications
There are a lot of Nexperia USA Inc. PBSS8110Y,115 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
