2SA1179N6-TB-E Overview
This device has a DC current gain of 135 @ 1mA 6V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.Maximum collector currents can be below 150mA volts.
2SA1179N6-TB-E Features
the DC current gain for this device is 135 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
2SA1179N6-TB-E Applications
There are a lot of ON Semiconductor 2SA1179N6-TB-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
