PBSS5240V,115 Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 1.8A volts.
PBSS5240V,115 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5240V,115 Applications
There are a lot of Nexperia USA Inc. PBSS5240V,115 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
