Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5401YTA

2N5401YTA

2N5401YTA

ON Semiconductor

2N5401YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5401YTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -160V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating-600mA
Frequency 400MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N5401
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Gain Bandwidth Product400MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage150V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:137798 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.140854$0.140854
10$0.132882$1.32882
100$0.125360$12.536
500$0.118264$59.132
1000$0.111570$111.57

2N5401YTA Product Details

2N5401YTA Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

2N5401YTA Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401YTA Applications


There are a lot of ON Semiconductor 2N5401YTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News