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2N3962

  • 2N3962 - 2N3962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
  • 2N3962 - 2N3962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

2N3962

2N3962

ON Semiconductor

2N3962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3962 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N3962
Power - Max 360mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 200mA
RoHS StatusNon-RoHS Compliant
In-Stock:3932 items

2N3962 Product Details

2N3962 Description


The ON Semiconductor 2N3962 is a PNP silicon planar transistor designed for AF small signal amplifier stages.



2N3962 Features


  • Operating & Storage Junction Temperature -55 to + 150℃

  • Collector-Emitter Voltage VCEO 60 V

  • Collector-Base Voltage VCBO 60 V



2N3962 Applications


  • Industrial

  • Low noise applications


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