BC857BTT1 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 100MHz is present in the part.A maximum collector current of 100mA volts can be achieved.
BC857BTT1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1 Applications
There are a lot of ON Semiconductor BC857BTT1 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
