MPS8599RLRMG Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 150MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
MPS8599RLRMG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS8599RLRMG Applications
There are a lot of ON Semiconductor MPS8599RLRMG applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
