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PBSS4330X,135

PBSS4330X,135

PBSS4330X,135

Nexperia USA Inc.

PBSS4330X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4330X,135 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation1.6W
Terminal FormFLAT
Frequency 100MHz
Base Part Number PBSS4330
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage30V
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:78537 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.097840$0.09784
500$0.071941$35.9705
1000$0.059951$59.951
2000$0.055001$110.002
5000$0.051403$257.015
10000$0.047816$478.16
15000$0.046244$693.66
50000$0.045471$2273.55

PBSS4330X,135 Product Details

PBSS4330X,135 Overview


In this device, the DC current gain is 270 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 100MHz.An input voltage of 30V volts is the breakdown voltage.Collector current can be as low as 3A volts at its maximum.

PBSS4330X,135 Features


the DC current gain for this device is 270 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS4330X,135 Applications


There are a lot of Nexperia USA Inc. PBSS4330X,135 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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