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ZXTP25140BFHTA

ZXTP25140BFHTA

ZXTP25140BFHTA

Diodes Incorporated

ZXTP25140BFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25140BFHTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -140V
Max Power Dissipation1.81W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 75MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25140
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product75MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 100mA, 1A
Collector Emitter Breakdown Voltage140V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage-260mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13121 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.717578$0.717578
10$0.676960$6.7696
100$0.638642$63.8642
500$0.602492$301.246
1000$0.568389$568.389

ZXTP25140BFHTA Product Details

ZXTP25140BFHTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 2V.A collector emitter saturation voltage of -260mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.The maximum collector current is 1A volts.

ZXTP25140BFHTA Features


the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 260mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 75MHz

ZXTP25140BFHTA Applications


There are a lot of Diodes Incorporated ZXTP25140BFHTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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