PBSS3515M,315 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -6V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.This device can take an input voltage of 15V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PBSS3515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
PBSS3515M,315 Applications
There are a lot of Nexperia USA Inc. PBSS3515M,315 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
