PBHV8115X,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.The collector emitter saturation voltage is 33mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.An input voltage of 150V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBHV8115X,115 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 33mV
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
PBHV8115X,115 Applications
There are a lot of Nexperia USA Inc. PBHV8115X,115 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
