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ZXTP19020DZTA

ZXTP19020DZTA

ZXTP19020DZTA

Diodes Incorporated

ZXTP19020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP19020DZTA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation4.46W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 176MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP19020D
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product176MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 275mV @ 300mA, 6A
Collector Emitter Breakdown Voltage20V
Transition Frequency 176MHz
Collector Emitter Saturation Voltage-275mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7904 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.052877$0.052877
500$0.038880$19.44
1000$0.032400$32.4
2000$0.029725$59.45
5000$0.027780$138.9
10000$0.025842$258.42
15000$0.024992$374.88
50000$0.024575$1228.75

ZXTP19020DZTA Product Details

ZXTP19020DZTA Overview


DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -275mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 275mV @ 300mA, 6A.The emitter base voltage can be kept at 7V for high efficiency.As a result, the part has a transition frequency of 176MHz.This device can take an input voltage of 20V volts before it breaks down.During maximum operation, collector current can be as low as 6A volts.

ZXTP19020DZTA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz

ZXTP19020DZTA Applications


There are a lot of Diodes Incorporated ZXTP19020DZTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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