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PBSS5360ZX

PBSS5360ZX

PBSS5360ZX

Nexperia USA Inc.

PBSS5360ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5360ZX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation650mW
Pin Count4
Power - Max 650mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage60V
Max Breakdown Voltage 60V
Frequency - Transition 130MHz
Collector Base Voltage (VCBO) 80V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:56284 items

Pricing & Ordering

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PBSS5360ZX Product Details

PBSS5360ZX Overview


In this device, the DC current gain is 120 @ 1A 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 300mA, 3A.Breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

PBSS5360ZX Features


the DC current gain for this device is 120 @ 1A 5V
the vce saturation(Max) is 550mV @ 300mA, 3A

PBSS5360ZX Applications


There are a lot of Nexperia USA Inc. PBSS5360ZX applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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