KSB1116SYTA Overview
DC current gain in this device equals 135 @ 100mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.Supplier device package TO-92-3 comes with the product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
KSB1116SYTA Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of TO-92-3
KSB1116SYTA Applications
There are a lot of ON Semiconductor KSB1116SYTA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
