MSD601-ST1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
MSD601-ST1G Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
MSD601-ST1G Applications
There are a lot of Rochester Electronics, LLC MSD601-ST1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
